Semiconductor device and method for fabricating the same

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United States of America Patent

PATENT NO 12063871
APP PUB NO 20230380296A1
SERIAL NO

18230189

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Abstract

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A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.

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UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yu-Chun Kaohsiung, TW 95 196
Chiu, Chiu-Jung Tainan, TW 17 33
Chu, Chung-Liang Kaohsiung, TW 29 43
Feng, Ya-Sheng Tainan, TW 21 32
Hu, Hsiu-Hao Keelung, TW 7 1
Lee, Yi-Hui Taipei, TW 62 241
Shih, Yi-An Changhua County, TW 43 60
Tseng, I-Ming Kaohsiung, TW 85 863

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