Structure and method for manufacturing a trench power MOSFET
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United States of America Patent
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Aug 13, 2024
Grant Date -
Sep 22, 2022
app pub date -
Nov 4, 2021
filing date -
Mar 16, 2021
priority date (Note) -
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Abstract
A trench power MOSFET includes a body region disposed on a semiconductor substrate, a trench passing through the body region, an top electrode and a bottom electrode spaced apart from each other in a vertical direction in the trench, an inter-electrode dielectric layer disposed between the top electrode and the bottom electrode, and a plurality of dielectric layers, disposed between a sidewall of the trench and the bottom electrode, comprising a first oxide layer disposed on the sidewall of the trench, an barrier layer disposed on the first oxide layer, and a second oxide layer disposed on the barrier layer. The barrier layer is formed of a material different from materials of the first and second oxide layers.
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