Semiconductor device
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United States of America Patent
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Aug 13, 2024
Grant Date -
Aug 11, 2022
app pub date -
Oct 18, 2021
filing date -
Feb 5, 2021
priority date (Note) -
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Abstract
A semiconductor device includes an active pattern disposed on a substrate. A gate insulating film is disposed on the active pattern and extends along the active pattern. A work function adjustment pattern is disposed on the gate insulating film and extends along the gate insulating film. A gate electrode is disposed on the work function adjustment pattern. The work function adjustment pattern includes a first work function adjustment film, a second work function adjustment film that includes aluminum and wraps the first work function adjustment film, and a barrier film including titanium silicon nitride (TiSiN). A silicon concentration of the barrier film is in a range of about 30 at % or less.
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