Semiconductor device, semiconductor device manufacturing method, inverter circuit, drive device, vehicle, and elevator

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United States of America Patent

PATENT NO 12062691
APP PUB NO 20240047514A1
SERIAL NO

18487200

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Abstract

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A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face opposite to the first face, and including a p-type silicon carbide region in contact with the first face, a percentage of a first silicon atom among a plurality of silicon atoms present in a first layer as an uppermost layer being equal to or more than 90% and a site position of the first silicon atom being different from a site position of a silicon atom in a third layer from the first face and the same as a site position of a silicon atom in a fifth layer from the first face; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer including nitrogen.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shimizu, Tatsuo Tokyo, JP 299 2391

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