Semiconductor device with a contact plug adjacent a gate structure
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United States of America Patent
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Aug 13, 2024
Grant Date -
Oct 27, 2022
app pub date -
Jul 12, 2022
filing date -
Jul 12, 2022
priority date (Note) -
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Abstract
A semiconductor device includes a substrate, a gate structure on the substrate, a first etch stop layer, a second etch stop layer, and an interlayer insulation layer that are stacked on the gate structure, and a contact plug penetrating the interlayer insulation layer, the second etch stop layer, and the first etch stop layer and contacting a sidewall of the gate structure. The contact plug includes a lower portion having a first width and an upper portion having a second width. A lower surface of the contact plug has a stepped shape.
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