Bulk GaN crystal, c-plane GaN wafer, and method for manufacturing bulk GaN crystal

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United States of America

PATENT NO 12060653
SERIAL NO

17560427

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Abstract

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Provided is a bulk GaN crystal in which the degree of curvature of the c-plane is reduced. The bulk GaN crystal includes a main surface selected from a surface inclined at 0° to 10° from the (0001) crystal plane and a surface inclined at 0° to 10° from the (000-1) crystal plane, and the main surface is a specific main surface A that satisfies the following conditions (i) and (ii): (i) a first line, which is a 80 mm-long virtual line segment extending in a first direction on the specific main surface A, can be drawn, and a difference between a maximum value and a minimum value of peak angles in (002) XRD rocking curves of the GaN crystal, which is measured between 17 measurement points arranged at a 5-mm pitch on the first line with the omega axis being perpendicular to the first direction, is 0.05° or less; and (ii) a second line, which is a 80 mm-long virtual line segment extending in a second direction perpendicular to the first direction on the specific main surface A, can be drawn, and a difference between a maximum value and a minimum value of peak angles in (002) XRD rocking curves of the GaN crystal, which is measured between 17 measurement points arranged at a 5-mm pitch on the second line with the omega axis being perpendicular to the second direction, is 0.05° or less.

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI CHEMICAL CORPORATION1-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 100-8251

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mikawa, Yutaka Tokyo, JP 36 168
Okano, Tetsuo Tokyo, JP 2 9

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