Method for growth of atomic layer ribbons and nanoribbons of transition metal dichalcogenides
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United States of America Patent
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Aug 13, 2024
Grant Date -
Oct 13, 2022
app pub date -
Jun 29, 2022
filing date -
Apr 16, 2020
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Abstract
A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.
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