Decoupling capacitor inside gate cut trench

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United States of America

PATENT NO 12057387
SERIAL NO

17110381

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Abstract

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An approach to forming a semiconductor device where the semiconductor device includes a first power rail with one or more vertically stacked contact vias connecting to the first power rail to a portion of a first de-coupling capacitor. The semiconductor device includes the first de-coupling capacitor in a first portion of a semiconductor substrate in a first gate cut trench.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adusumilli, Praneet Somerset, US 166 950
Ando, Takashi Eastchester, US 736 6423
Chi, Cheng Jersey City, US 84 270
Vega, Reinaldo Mahopac, US 128 317
Wolpert, David Poughkeepsie, US 50 54

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