Group-III element nitride semiconductor substrate

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United States of America Patent

PATENT NO 12057307
APP PUB NO 20230220587A1
SERIAL NO

18180272

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Abstract

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There is provided a Group-III element nitride semiconductor substrate including a first surface and a second surface, in which even when devices to be produced on the first surface are increased in size, variations in device characteristics between the devices in the same substrate are suppressed. A Group-III element nitride semiconductor substrate includes a first surface and a second surface. The Group-III element nitride semiconductor substrate satisfies at least one of the following items (1) to (3): (1) The main surface has a maximum height Wz of a surface waviness profile of 150 nm or less; (2) The main surface has a root mean square height Wq of the surface waviness profile of 25 nm or less; (3) The main surface has an average length WSm of surface waviness profile elements of 0.5 mm or more.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTDJAPAN'S AICHI AICHI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Oue, Shohei Nagoya, JP 5 8
Sakai, Masahiro Nagoya, JP 99 768

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