Method to predict yield of a device manufacturing process

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United States of America

PATENT NO 12055904
SERIAL NO

17293373

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Abstract

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A method for predicting yield relating to a process of manufacturing semiconductor devices on a substrate, the method including: obtaining a trained first model which translates modeled parameters into a yield parameter, the modeled parameters including: a) a geometrical parameter associated with one or more selected from: a geometric characteristic, dimension or position of a device element manufactured by the process and b) a trained free parameter; obtaining process parameter data including data regarding a process parameter characterizing the process; converting the process parameter data into values of the geometrical parameter; and predicting the yield parameter using the trained first model and the values of the geometrical parameter.

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Patent OwnerAddress
ASML NETHERLANDS B VDE RUN 6501 VELDHOVEN NL-5504 DR

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Yana San Jose, US 16 69
Genin, Maxime Philippe Frederic San Mateo, US 6 20
Hastings, Simon Philip Spencer San Jose, US 12 40
Lin, Chenxi Newark, US 40 572
Menchtchikov, Boris Cupertino, US 36 521
Tabery, Cyrus Emil Redwood City, US 13 22
Zhang, Youping Cupertino, US 67 2240
Zou, Yi Foster City, US 85 486

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