Semiconductor schottky rectifier device
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United States of America Patent
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Jul 30, 2024
Grant Date -
Oct 26, 2023
app pub date -
Jun 14, 2023
filing date -
Jan 14, 2020
priority date (Note) -
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Abstract
A method for forming a semiconductor Schottky rectifier device includes providing a semiconductor substrate, forming a hard mask for trench etch including openings for guard rings, an anode region, and a cathode region, and etching semiconductor epitaxial material layer to form a plurality of trenches. The method also includes forming a first dielectric layer and depositing a polysilicon layer, performing an anisotropic etch of the polysilicon layer to form polysilicon elements on sidewalls of the trench, and depositing and etching a second dielectric layer to expose a Schottky diode region and a bottom region of the trench in the cathode region. The method further includes depositing a first metal layer and performing a thermal treatment to form metal silicide in the Schottky diode region and the cathode region and forming a second metal layer and separating the second metal layer into an anode electrode and a cathode electrode.
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