Crystalline semiconductor layer formed in BEOL processes

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United States of America Patent

PATENT NO 12051702
APP PUB NO 20230197445A1
SERIAL NO

18167776

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Abstract

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A crystalline channel layer of a semiconductor material is formed in a backend process over a crystalline dielectric seed layer. A crystalline magnesium oxide MgO is formed over an amorphous inter-layer dielectric layer. The crystalline MgO provides physical link to the formation of a crystalline semiconductor layer thereover.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doornbos, Gerben Hsinchu, TW 198 1210
Duriez, Blandine Hsinchu, TW 86 351
Holland, Martin Christopher Hsinchu, TW 80 1005
Manfrini, Mauricio Hsinchu, TW 151 220
Passlack, Matthias Hsinchu, TW 100 1446
Van, Dal Marcus Johannes Henricus Hsinchu, TW 132 265
Vellianitis, Georgios Hsinchu, TW 147 1208

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