Monolayer graphene on non-polar face SiC substrate and control method thereof
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United States of America
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Jul 30, 2024
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Feb 28, 2019
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Feb 28, 2019
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Abstract
The present invention provides a control method to epitaxial growth monolayer graphene, in which a monolayer graphene is epitaxially grown on a non-polar crystal face at arbitrary angle of a non-polar crystal face SiC substrate, thereby utilizing the non-polar crystal face to manipulate the electrical transport properties of graphene. A monolayer graphene having ballistic transport properties can be epitaxially grown at arbitrary angle of non-polar crystal face SiC substrate by the above-mentioned control method.
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