Method for tuning work function using surface photo voltage and producing ultra-low-work-function surfaces, and devices operational therewith
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Jul 23, 2024
Grant Date -
N/A
app pub date -
Nov 30, 2021
filing date -
Nov 30, 2021
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The embodiments provide a thermionic emission device and a method for tuning a work function in a thermionic emission device is provided. The method includes illuminating an N type semiconductor material of a first member of a thermionic emission device, wherein a work function of the N type semiconductor material is lowered by the illuminating. The method includes collecting, on one of the first member or a second member of the thermionic emission device, electrons emitted from one of the first member or the second member.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY | OFFICE OF THE GENERAL COUNSEL BUILDING 170 3RD FLOOR MAIN QUAD P O BOX 20386 STANFORD CA 94305-2038 |
International Classification(s)

- 2021 Application Filing Year
- H01J Class
- 2475 Applications Filed
- 1245 Patents Issued To-Date
- 50.31 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Bargatin, Igor | Wynnewood, US | 18 | 99 |
# of filed Patents : 18 Total Citations : 99 | |||
Melosh, Nicholas A | Menlo Park, US | 23 | 173 |
# of filed Patents : 23 Total Citations : 173 | |||
Riley, Daniel | San Francisco, US | 12 | 51 |
# of filed Patents : 12 Total Citations : 51 | |||
Sahasrabuddhe, Kunal | Austin, US | 4 | 12 |
# of filed Patents : 4 Total Citations : 12 | |||
Schwede, Jared | Menlo, US | 2 | 26 |
# of filed Patents : 2 Total Citations : 26 | |||
Shen, Zhixun | Stanford, US | 4 | 35 |
# of filed Patents : 4 Total Citations : 35 |
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Patent Citation Ranking
- 0 Citation Count
- H01J Class
- 0 % this patent is cited more than
- 1 Age
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