Piezoelectric MEMS resonators based on porous silicon technologies
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United States of America Patent
Stats
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Jul 9, 2024
Grant Date -
Apr 20, 2023
app pub date -
Dec 17, 2022
filing date -
Dec 17, 2022
priority date (Note) -
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Abstract
A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TU XIANG ZHENG | SAN JOSE CA |
International Classification(s)

- 2022 Application Filing Year
- H03H Class
- 1102 Applications Filed
- 415 Patents Issued To-Date
- 37.66 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Tu, Xiang Zheng | San Jose, US | 22 | 423 |
# of filed Patents : 22 Total Citations : 423 |
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- H03H Class
- 0 % this patent is cited more than
- 1 Age
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Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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