Piezoelectric MEMS resonators based on porous silicon technologies
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United States of America Patent
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Jul 9, 2024
Grant Date -
Apr 20, 2023
app pub date -
Dec 17, 2022
filing date -
Dec 17, 2022
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Abstract
A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.
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