Piezoelectric MEMS resonators based on porous silicon technologies

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United States of America Patent

PATENT NO 12034431
APP PUB NO 20230116933A1
SERIAL NO

18083473

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Abstract

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A piezoelectric MEMS resonator is provided. The resonator comprises a single crystal silicon microstructure suspended over a buried cavity created in a silicon substrate and a piezoelectric resonance structure located on the microstructure. The resonator is designed and fabricated based on porous silicon related technologies including selective formation and etching of porous silicon in silicon substrate, porous silicon as scarified material for surface micromachining and porous silicon as substrate for single crystal silicon epitaxial growth. All these porous silicon related technologies are compatible with CMOS technologies and can be conducted in a standard CMOS technologies platform.

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Patent Owner(s)

Patent OwnerAddress
TU XIANG ZHENGSAN JOSE CA

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  • 2022 Application Filing Year
  • H03H Class
  • 1102 Applications Filed
  • 415 Patents Issued To-Date
  • 37.66 % Issued To-Date

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tu, Xiang Zheng San Jose, US 22 423

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges8934501 - 10050100150200250300350400450500550600650700750800850900950

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