Electrostatic protection structure and electrostatic protection circuit

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United States of America Patent

PATENT NO 12027846
APP PUB NO 20240170952A1
SERIAL NO

17790462

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Abstract

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Embodiments of the present disclosure relate to an electrostatic protection structure and an electrostatic protection circuit. The electrostatic protection structure includes: a SCR structure and a trigger structure; the SCR structure includes: a well region of a second conductivity type and a first well of a first conductivity type region, a first-doped region of the first conductivity type, and a first-doped region of the second conductivity type; the trigger structure includes: a first-doped region of the second conductivity type, a second well region of the first conductivity type, a second-doped region of two conductivity types, a third-doped region of the second conductivity type, a fourth-doped region of the second conductivity type, and a first gate electrode. The electrostatic protection structure weakens the positive feedback of the parasitic transistor in the SCR device, improves the anti-latch capability of the device, realizes stronger protection capability, and enhances the reliability of the circuit.

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Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INCNO 388 XINGYE AVENUE AIRPORT INDUSTRIAL PARK ECONOMIC AND TECHNOLOGICAL DEVELOPMENT AREA HEFEI ANHUI 230601

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Junjie Hefei, CN 117 1564
Mao, Pan Hefei, CN 11 38
Song, Bin Hefei, CN 43 163
Wu, Tieh-Chiang Hefei, CN 78 290
Xu, Qian Hefei, CN 228 1291
Zhang, Yingtao Hefei, CN 3 0
Zhu, Lingxin Hefei, CN 11 1

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