Scattering structures for single-photon avalanche diodes

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United States of America Patent

PATENT NO 12027633
APP PUB NO 20230387332A1
SERIAL NO

18449356

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An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. The light scattering structures may have different sizes and/or a layout with a non-uniform number of structures per unit area. SPAD devices may also include isolation structures in a ring around the SPADs to prevent crosstalk. The isolation structures may include metal-filled deep trench isolation structures. The metal filler may include tungsten.

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SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5701 N PIMA ROAD ATTN IP LEGAL DEPT SCOTTSDALE AS 85250

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Borthakur, Swarnal Boise, US 105 869

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