Pillar-shaped semiconductor device having connection material layer for anchoring wiring conductor layer and method for producing the same
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United States of America
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Jul 2, 2024
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app pub date -
Mar 14, 2022
filing date -
Mar 14, 2022
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Abstract
An SGT circuit includes a first conductor layer which contains a semiconductor atom, which is in contact with an N+ region and a P+ region of a Si pillar, or a TiN layer, and whose outer circumference is located outside an outer circumference of a SiO2 layer in plan view, and a second conductor layer which contains a metal atom, which is connected to an outer periphery of the first conductor layer, and which extends in a horizontal direction.
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