Method for forming a semiconductor device and a semiconductor device
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United States of America Patent
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Jul 2, 2024
Grant Date -
Nov 18, 2021
app pub date -
Jul 29, 2021
filing date -
Nov 17, 2017
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Abstract
A method of forming a semiconductor device and a semiconductor device are provided. The method includes forming a graphene layer at a first side of a silicon carbide substrate having at least next to the first side a first defect density of at most 5*102/cm2; attaching an acceptor layer at the graphene layer to form a wafer-stack, the acceptor layer comprising silicon carbide having a second defect density higher than the first defect density; forming an epitaxial silicon carbide layer; splitting the wafer-stack along a split plane in the silicon carbide substrate to form a device wafer comprising the graphene layer and a silicon carbide split layer at the graphene layer; and further processing the device wafer at the upper side.
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