Semiconductor integrated circuit

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United States of America Patent

PATENT NO 12027424
APP PUB NO 20210358812A1
SERIAL NO

17388512

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Abstract

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A semiconductor integrated circuit (IC) including a first fin structure having a first aqueous soluble channel layer. The semiconductor IC includes a first gate structure over the first aqueous soluble channel layer, wherein the first gate structure includes a first oxide film directly contacting the first aqueous soluble channel layer, and the first oxide film includes a first material. The semiconductor IC includes a first spacer along the first gate structure, wherein a bottom surface of the first spacer is above an interface between the first oxide layer and the first aqueous soluble channel layer. The semiconductor IC includes a second fin structure having a second aqueous soluble channel layer. The semiconductor IC includes a second gate structure over the second aqueous channel layer, wherein the second gate structure includes a second oxide film directly contacting the second aqueous soluble channel layer, the second oxide film includes a second material.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, You-Hua Hsinchu, TW 118 1212
Chuang, Kuo-Sheng Hsinchu, TW 52 211
Oniki, Yusuke Hsinchu, TW 32 172

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