Method for fabricating semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 12027368
APP PUB NO 20220344153A1
SERIAL NO

17397482

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Abstract

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A method for forming a semiconductor device is provided. The method for forming a semiconductor device is provided. The method includes coating a photoresist film over a target layer; performing a lithography process to pattern the photoresist film into a photoresist layer; performing a directional ion bombardment process to the photoresist layer, such that a carbon atomic concentration in the photoresist layer is increased; and etching the target layer using the photoresist layer as an etch mask.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chun-Yen Hsinchu, TW 76 808
Chang, Hsiang-Ming Hsinchu, TW 5 0
Chang, Ya-Hui Hsinchu, TW 26 81
Chen, Chia-Cheng Hsinchu, TW 140 822
Chen, Liang-Yin Hsinchu, TW 145 512
Chien, Wei-Ting Hsinchu, TW 39 78
Shen, Yu-Tien Tainan, TW 40 65
Yang, Chih-Kai Taipei, TW 112 607

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