Substrate treatment apparatus and manufacturing method of semiconductor device
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United States of America Patent
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Jul 2, 2024
Grant Date -
Feb 10, 2022
app pub date -
Oct 25, 2021
filing date -
Oct 25, 2021
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Abstract
In a manufacturing method of a semiconductor device according to one embodiment, a first gas containing a first metal element is introduced into a chamber having a substrate housed therein. Next, the first gas is discharged from the chamber using a purge gas. Subsequently, a second gas reducing the first gas is introduced into the chamber. Next, the second gas is discharged from the chamber using the purge gas. Further, a third gas different from the first gas, the second gas, and the purge gas is introduced into the chamber at least either at a time of discharging the first gas or at a time of discharging the second gas.
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