Phase shift mask for EUV lithography and manufacturing method for the phase shift mask

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United States of America Patent

PATENT NO 12025912
APP PUB NO 20220397818A1
SERIAL NO

17529071

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Abstract

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There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ha, Tae Joong Icheon-si, KR 19 23

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