Ultrapure mineralizer and improved methods for nitride crystal growth

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12024795
SERIAL NO

17514656

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Abstract

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A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.

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Patent Owner(s)

Patent OwnerAddress
SLT TECHNOLOGIES INCC/O LOEB & LOEB 10100 SANTA MONICA BLVD SUITE 2200 LOS ANGELES CA 90067

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cook, Jonathan D Santa Barbara, US 9 19
D'Evelyn, Mark P Vancouver, US 113 5838
Gay, Lisa M Vancouver, US 2 1
Pocius, Douglas W Aguanga, US 22 792
Von, Dollen Paul M Brush Prairie, US 11 2

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