Time of flight sensor device and time of flight sensor arrangement
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United States of America Patent
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Jun 18, 2024
Grant Date -
Sep 10, 2020
app pub date -
Mar 3, 2020
filing date -
Mar 4, 2019
priority date (Note) -
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status (Latency Note)
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Abstract
According to an embodiment, a time of flight sensor device includes: a semiconductor substrate having a conversion region to convert an electromagnetic signal into photo-generated charge carriers, and including a substrate doping region having a n-doping type. The substrate doping region extends from a first main surface region of the semiconductor substrate into the semiconductor substrate. The semiconductor substrate has a p doped region adjacent to the substrate doping region. The substrate doping region at least partially forms the conversion region in the semiconductor substrate. A readout node arranged in the semiconductor substrate within the substrate doping region and having the n-doping type is configured to readout the photo generated charge carriers. A control electrode is arranged in the substrate doping region of the semiconductor substrate and in the substrate doping region and has a p-doping type.
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