Method for manufacturing semiconductor device

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United States of America

PATENT NO 12010845
SERIAL NO

17459856

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Abstract

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According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c).

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATION1-21 SHIBAURA 3-CHOME MINATO-KU TOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beppu, Takayuki Yokkaichi Mie, JP 12 9
Kitamura, Masayuki Yokkaichi Mie, JP 100 1192
Natori, Katsuaki Yokkaichi Mie, JP 76 819
Toyoda, Hiroshi Yokkaichi Mie, JP 90 876
Yamakawa, Koji Yokkaichi Mie, JP 113 1884

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