Ferroelectric thin film

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United States of America Patent

PATENT NO 11999614
APP PUB NO 20230399229A1
SERIAL NO

18151810

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Abstract

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Provided is a thin film including Mo1-xWxTe2 stacked in a plurality of layers. The thin film has a thickness of about 1 nm to about 100 nm in a stacking direction, has a symmetric lattice structure at a temperature higher than a threshold temperature, and has an asymmetric lattice structure at a temperature equal to or lower than the threshold temperature.

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Patent Owner(s)

  • KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY; RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eshete, Yonas Assefa Suwon-si, KR 2 0
Hwang, Eunji Daejeon, KR 24 37
Yang, Heejun Daejeon, KR 10 5

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