Semiconductor light-emitting device
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United States of America Patent
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May 28, 2024
Grant Date -
Mar 16, 2023
app pub date -
Nov 8, 2022
filing date -
Dec 22, 2017
priority date (Note) -
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Abstract
A semiconductor light-emitting device includes: a conductive support substrate; a metal layer comprising a reflective metal provided on the conductive support substrate; a semiconductor laminate provided on the metal layer, the semiconductor laminate being a stack of a plurality of InGaAsP-based III-V group compound semiconductor layers containing at least In and P; an n-type InGaAs contact layer provided on the semiconductor laminate; and an n-side electrode provided on the n-type InGaAs contact layer. A center emission wavelength of light emitted from the semiconductor laminate is 1000 to 2200 nm.
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