Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layer
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United States of America Patent
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May 28, 2024
Grant Date -
Aug 10, 2023
app pub date -
Apr 17, 2023
filing date -
Jan 23, 2012
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Abstract
Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.
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