Nitride phosphor and method for producing same

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United States of America Patent

PATENT NO 11993739
APP PUB NO 20220315837A1
SERIAL NO

17657111

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Abstract

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Provided a method for producing a nitride phosphor. The method includes preparing a mixture that comprises a first nitride and a cerium source, the first nitride comprising, as a host crystal, a crystal having the same crystal structure as CaAlSiN3; and performing a heat treatment of the mixture at a temperature of 1,300° C. to 1,900° C. to obtain a second nitride. The first nitride comprises aluminum, silicon, nitrogen, and at least one selected from the group consisting of lithium, calcium, and strontium.

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Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATION491-100 OKA KAMINAKA-CHO ANAN-SHI TOKUSHIMA 7748601 ?7748601

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinoshita, Shimpei Anan, JP 5 0
Shinohara, Takayuki Anan, JP 74 1097

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