Semiconductor device and method for fabricating the same

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United States of America

PATENT NO 11990547
SERIAL NO

17033897

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Abstract

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A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

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Patent Owner(s)

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UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Yu Taichung, TW 138 779
Huang, Bo-Lin Taichung, TW 2 0
Huang, Jhong-Yi Nantou County, TW 7 8
Lin, Keng-Jen Kaohsiung, TW 17 298
Lin, Yu-Shu Tainan, TW 53 239

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