Method of manufacturing a semiconductor device having frame structures laterally surrounding backside metal structures

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United States of America

PATENT NO 11990520
SERIAL NO

17532030

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Abstract

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A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGAM CAMPEON 1-12 NEUBIBERG 85579

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brockmeier, Andre Villach, AT 39 429
Denifl, Guenter Annenheim, AT 19 393
Kern, Ronny Finkenstein, AT 22 18
Knabl, Michael Finkenstein, AT 9 26
Piccin, Matteo Villach, AT 13 18
Santos, Rodriguez Francisco Javier Villach, AT 124 603

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