Semiconductor devices and methods for forming the same

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United States of America

PATENT NO 11989966
SERIAL NO

17497362

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Abstract

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A method for forming semiconductor devices includes providing a substrate with a conductive pad formed thereon; forming a transparent structure over the substrate, wherein the transparent structure includes a plurality of collimating pillars adjacent to the conductive pad; forming a light-shielding structure over the plurality of collimating pillars and the conductive pad; performing a cutting process to remove one or more materials directly above the conductive pad, while leaving remaining material to cover the conductive pad, wherein the material includes a portion of the light-shielding structure; and performing an etching process to remove the remaining material to expose the conductive pad.

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Patent Owner(s)

Patent OwnerAddress
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION123 PARK AVE-3RD HSINCHU SCIENCE PARK HSINCHU 30077

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chih-Hsien New Taipei, TW 35 214
Chen, Si-Twan Jhubei, TW 6 8
Chen, Yin Hsinchu, TW 119 1501
Lee, Hsin-Hui Kaohsiung, TW 68 800
Lin, Hsueh-Jung Jhubei, TW 15 19
Lin, Kwang-Ming Taichung, TW 28 283
Lu, Wen-Chih New Taipei, TW 8 11
Tseng, Han-Liang Hsinchu, TW 24 177
Yu, Jiunn-Liang Taipei, TW 8 11

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