Semiconductor devices with single-photon avalanche diodes and hybrid isolation structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 14, 2024
Grant Date -
Jul 6, 2023
app pub date -
Feb 24, 2023
filing date -
Dec 4, 2019
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully