Simulation method for semiconductor fabrication process and method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 11982980
APP PUB NO 20220043405A1
SERIAL NO

17230275

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Abstract

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According to an aspect of the present inventive concept, a simulation method for a semiconductor fabrication process includes obtaining, as input data, process parameters for controlling a semiconductor process of manufacturing semiconductor devices, or design parameters representing a structure of the semiconductor devices, or both the process parameters and the design parameters; generating predictive data for electrical characteristics of the semiconductor devices using a machine learning model based on the input data; generating reference data for the electrical characteristics of the semiconductor devices using a simulation tool based on the input data; and training the machine learning model using the predictive data and the reference data.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Kanghyun Seoul, KR 2 2
Jang, Wonik Suwon-si, KR 5 3
Jeon, Yongwoo Seoul, KR 8 42
Jeong, Changwook Hwaseong-si, KR 28 43
Kim, Jinwoo Hwaseong-si, KR 282 2296
Myung, Sanghoon Goyang-si, KR 10 9
Ryu, Jisu Hwaseong-si, KR 12 12

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