Method and assembly for infiltration and rapid phase deposition of porous components
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
May 14, 2024
Grant Date -
N/A
app pub date -
Oct 30, 2019
filing date -
Oct 30, 2019
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A chemical vapor infiltration (CVI) method for densifying at least one porous component includes placing the at least one porous component inside a crucible, bringing temperature inside the crucible to a value adapted to densify the porous component to transform it into a densified component, bringing pressure inside the crucible between 0.1 KPa and 25 KPa, once operational temperature and pressure are reached, flowing gas inside the crucible, gas being suitable for densifying the porous component to transform it into a densified component, and keeping an oxidizing environment outside the crucible, the external environment lapping against the crucible. The crucible is provided of at least one material having thermal conductivity greater than 30 W/mK from room temperature to at least 1000° C. selected from: sintered silicon carbide (SiC), silicon-infiltrated silicon carbide (Si—SiC), sintered boron carbide (B4C), silicon-infiltrated boron carbide (Si—B4C), sintered zirconium carbide (ZrC), silicon-infiltrated zirconium carbide (Si—ZrC), a combination of silicon carbide (SiC), boron carbide (B4C) and sintered and/or silicon-infiltrated zirconium carbide (ZrC).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully