Sputter deposited crystalline ordered topological insulator/ferromagnet (TI/FM) thin film heterostructures for spintronics applications

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United States of America

PATENT NO 11968905
SERIAL NO

17365779

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A sputter growth method for a crystalline ordered topological insulator (TI) material on an amorphous substrate, which is possible to use at a CMOS-compatible temperature. The process can be integrated into CMOS fabrication processes for Spin Orbit Torque (SOT) devices. The resulting material can include a thin film crystalline ordered TI layer, sputter deposited on an amorphous substrate, and an adjacent ferromagnetic (FM) layer in which spin-orbit torque is provided by the TI layer, for example to cause switching in magnetic states in a magnetic memory device.

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NORTHEASTERN UNIVERSITY360 HUNTINGTON AVENUE BOSTON MASSACHUSETTS 02115

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhattacharjee, Nirjhar Cambridge, US 2 4
Sun, Nian-Xiang Winchester, US 22 399

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