Semiconductor device including work function adjusting metal gate structure
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Apr 23, 2024
Grant Date -
N/A
app pub date -
Feb 11, 2022
filing date -
Feb 11, 2022
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully