Method for manufacturing core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator

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United States of America Patent

PATENT NO 11963450
APP PUB NO 20230389431A1
SERIAL NO

18448861

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Abstract

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A method for manufacturing a core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator is provided. A mask covering a center part of a gallium nitride wafer is removed. An electrodeless photoelectrochemical etching is performed on the gallium nitride wafer to form a primary GaN nanowire array on a surface of the gallium nitride wafer. A precious metal layer provided on the surface of the gallium nitride wafer is removed and an alumina layer is deposited on the surface of the gallium nitride wafer to cover the primary GaN nanowire array to obtain a core-shell coaxial GaN nanowire array. A first conductive layer is provided on a flexible substrate to which the core-shell coaxial GaN nanowire array is transferred. A second conductive layer is provided at a top end of the core-shell coaxial GaN nanowire array, and is connected to an external circuit to obtain the core-shell coaxial GaN piezoelectric nanogenerator.

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Patent Owner(s)

Patent OwnerAddress
GUANGDONG UNIVERSITY OF TECHNOLOGYNO 100 WAIHUAN WEST ROAD UNIVERSITY TOWN GUANGZHOU GUANGDONG 510062 GUANGZHOU CITY GUANGDONG PROVINCE 510062

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Xin Guangzhou, CN 816 7998
Chen, Yun Guangzhou, CN 224 841
Hou, Maoxiang Guangzhou, CN 9 0
Li, Zijian Guangzhou, CN 16 7
Song, Aoke Guangzhou, CN 2 0
Yu, Pengfei Guangzhou, CN 126 192

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