Engineered nanostructured passivated contacts and method of making the same
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United States of America
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Apr 16, 2024
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app pub date -
Nov 1, 2021
filing date -
Nov 1, 2021
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Abstract
The present disclosure relates to a passivating contact that includes a dielectric layer constructed of a first material, an intervening layer constructed of a second material, and a substrate constructed of a semiconductor, where the dielectric layer is positioned between the substrate and the intervening layer, the dielectric layer has a first thickness, and the substrate has a second thickness. The passivating contact also includes a plurality of conductive pathways that include the second material and pass through the first thickness, the second material penetrates into the second thickness forming a plurality of penetrating regions within the substrate, and the plurality of conductive pathways are configured to allow current to pass through the first thickness.
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