Methods for passivating sidewalls of semiconductor wafers and semiconductor devices incorporating semiconductor wafers
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United States of America Patent
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Apr 2, 2024
Grant Date -
Mar 2, 2023
app pub date -
Aug 24, 2021
filing date -
Aug 24, 2021
priority date (Note) -
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Abstract
A method for passivating sidewalls of patterned semiconductor wafer including ridge(s). The method includes: depositing first layer of first dielectric material on pattern surface of said wafer; etching portion of first layer to obtain tapered portions of first dielectric material along sidewall(s) of ridge(s); depositing second layer of second dielectric material on tapered portions and said wafer; depositing photo-sensitive material on second layer; aligning mask with photo-sensitive material, wherein portion(s) of photo-sensitive material corresponding to top surface of ridge(s) is/are unmasked, and remaining portion is masked; applying developing solution and exposing photo-sensitive material to remove portion(s) of photo-sensitive material; etching portion(s) of second layer that is/are deposited on top surface of ridge(s); and removing photo-sensitive material.
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