Annealing apparatus using two wavelengths of radiation

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United States of America Patent

PATENT NO 11945045
APP PUB NO 20210053147A1
SERIAL NO

17090709

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Abstract

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A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adams, Bruce E Portland, US 77 1667
Hunter, Aaron Muir Santa Cruz, US 90 1115
Jennings, Dean Beverly, US 71 7824
Liang, Haifan Oakland, US 69 556
Mayur, Abhilash J Salinas, US 90 7652
Parihar, Vijay Fremont, US 37 6368
Ranish, Joseph M San Jose, US 184 5380
Yam, Mark Monte Sereno, US 55 1951

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