Fin field-effect transistor and method of forming the same

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United States of America Patent

PATENT NO 11942532
APP PUB NO 20230062257A1
SERIAL NO

17461135

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Abstract

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A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chao-Hsuan Hsinchu, TW 13 9
Chen, Ryan Chia-Jen Hsinchu, TW 173 1719
Lin, Yu-Hsien Kaohsiung, TW 79 446
Tai, Ming-Chia Zhubei, TW 21 179
Yang, Shun-Hui Jungli, TW 18 69

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