Semiconductor device having asymmetrical source/drain
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United States of America Patent
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Mar 26, 2024
Grant Date -
Aug 4, 2022
app pub date -
Apr 21, 2022
filing date -
Apr 23, 2015
priority date (Note) -
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Abstract
A semiconductor device includes a substrate, a first active fin on the substrate, the first active fin including a first side surface and a second side surface opposing the first side surface, a second active fin on the substrate, the second active fin including a third side surface facing the second side surface and a fourth side surface opposing the third side surface of the second active fin, a first isolation layer on the first side surface of the first active fin, a second isolation layer between the second side surface of the first active fin and the third side surface of the second active fin, a third isolation layer on the fourth side surface of the second active fin and a merged source/drain on the first and second active fins.
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