Methods of manufacturing semiconductor devices
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United States of America Patent
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Mar 19, 2024
Grant Date -
Apr 1, 2021
app pub date -
Dec 14, 2020
filing date -
Oct 5, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.
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