Semiconductor epitaxial wafer and method of producing semiconductor epitaxial wafer, and method of producing solid-state imaging device

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United States of America Patent

PATENT NO 11935745
APP PUB NO 20230215730A1
SERIAL NO

18119434

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Abstract

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An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×1017 atoms/cm3.

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Patent Owner(s)

  • SUMCO CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okuyama, Ryosuke Tokyo, JP 10 11

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