Superjunction transistor device
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United States of America
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Mar 12, 2024
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N/A
app pub date -
Oct 28, 2021
filing date -
Oct 28, 2021
priority date (Note) -
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Abstract
A method and a transistor device are disclosed. The transistor device includes: a semiconductor body; first regions of a first doping type and second regions of a second doping type in an inner region and an edge region of the semiconductor body; transistor cells in the inner region of the semiconductor body, each transistor cell including a body region and a source region, the transistor cells including a common drain region; and a buffer region arranged between the drain region and the first and second regions. A dopant dose in the first and second regions decreases towards an edge surface of the semiconductor body. A dopant dose in the buffer region decreases towards the edge surface.
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