Semiconductor devices having improved electrical characteristics and methods of fabricating the same
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United States of America Patent
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Mar 12, 2024
Grant Date -
Aug 10, 2023
app pub date -
Apr 12, 2023
filing date -
Sep 16, 2019
priority date (Note) -
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Abstract
The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.
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