Semiconductor memory device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 12, 2024
Grant Date -
Mar 23, 2023
app pub date -
Mar 10, 2022
filing date -
Sep 17, 2021
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A first memory cell includes a first variable resistance element and a first switching element. A control circuit is configured to execute first detection of detecting a first value of a first physical quantity related to the first memory cell, execute first write for storing first data in the first memory cell, execute second detection of detecting a second value of the first physical quantity related to the first memory cell following the first write, and read second data related to the first memory cell based on the first value and the second value. At least one of the first value and the second value is a value during a change in the first physical quantity related to the first memory cell.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully