Importance

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Abstract

The present application provides a method for detecting temperature of thermal chamber comprising: conducting a thermal treatment at a predicted temperature to a selected silicon wafer within a thermal chamber, wherein the predicted temperature comprises plural temperature points set in order; obtaining a haze value corresponding to the predicted temperature; obtaining a linear relationship I between the temperature and the haze; polishing and washing the silicon wafer; conducting a thermal treatment at a predicted temperature to the polished silicon wafer within the thermal chamber; obtaining a linear relationship II between the temperature and the haze; calculating a difference of the haze at same temperature point between the two thermal treatments, and obtaining an actual temperature difference of the thermal chamber based on the difference of the haze. The present application increases efficiency and accuracy of temperature detection of the thermal chamber, reduce fluctuations caused by silicon wafer thickness and resistivity, increase utilization of silicon wafer, and reduce cost.

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First Claim